Growth of In2O3 Nanowires Catalyzed by Cu via a Solid–Liquid–Solid Mechanism
نویسندگان
چکیده
In2O3 nanowires that are 10-50 nm in diameter and several hundred nanometers to micrometers in length have been synthesized by simply annealing Cu-In compound at a relatively low temperature of 550°C. The catalysis of Cu on the growth of In2O3 nanowires is investigated. It is believed that the growth of In2O3 nanowires is via a solid-liquid-solid (SLS) mechanism. Moreover, photoluminescence (PL) peaks of In2O3 nanowires at 412 and 523 nm were observed at room temperature, and their mechanism is also discussed.
منابع مشابه
A flux induced crystal phase transition in the vapor-liquid-solid growth of indium-tin oxide nanowires.
Single crystalline metal oxide nanowires formed via a vapor-liquid-solid (VLS) route provide a platform not only for studying fundamental nanoscale properties but also for exploring novel device applications. Although the crystal phase variation of metal oxides, which exhibits a variety of physical properties, is an interesting feature compared with conventional semiconductors, it has been diff...
متن کاملMetal-catalyzed semiconductor nanowires
Semiconductor nanowires have become an important building block for nanotechnology. The growth of semiconductor nanowires using a metal catalyst via the vapor–liquid–solid (VLS) or vapor–solid–solid (VSS) mechanism has yielded growth directions in 〈1 1 1〉, 〈1 0 0〉 and 〈1 1 0〉 etc. In this paper, we summarize and discuss a broad range of factors that affect the growth direction of VLS or VSS gro...
متن کاملElectrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing the Sn:In2O3 nanowires to H2S at 300 °C but also cubic bixbyite In2O3, which remains dominant, and the emergence of rhombohedral In2(SO4)3 at 400 °C. The resultant nanowir...
متن کاملControlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature
High uniformity Au-catalyzed indium selenide (In2Se3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In2Se3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100 °C/s. Comparing with the slower heating rate, 0...
متن کاملGrowth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy
Ultrathin ZnSe nanowires grown by Au-catalyzed molecular-beam epitaxy show an interesting growth behavior of diameter-dependence of growth rates. The smaller the nanowire diameter, the faster is its growth rate. This growth behavior is totally different from that of the nanowires with diameters greater than 60 nm and can not be interpreted by the classical theories of the vapor-liquid-solid mec...
متن کامل